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Luminescence Spectroscopy of Semiconductors$
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Ivan Pelant and Jan Valenta

Print publication date: 2012

Print ISBN-13: 9780199588336

Published to Oxford Scholarship Online: May 2012

DOI: 10.1093/acprof:oso/9780199588336.001.0001

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7 Luminescence of excitons

7 Luminescence of excitons

Chapter:
(p.161) 7 Luminescence of excitons
Source:
Luminescence Spectroscopy of Semiconductors
Author(s):

Ivan Pelant

Jan Valenta

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199588336.003.0007

Luminescence of excitons’ treats in a comprehensive way a series of luminescence manifestations of bound electron–hole pairs, i.e. excitons. First, the concept of a free Wannier exciton is introduced and a shape of the pertinent absorption spectrum is described. Then multiple luminescence effects due to the free exciton radiative recombination are discussed in direct bandgap materials (exciton–polariton luminescence and LO-phonon assisted exciton annihilation) as well as in indirect bandgap materials (no-phonon luminescence, phonon replicas). Relevant selection rules are derived. Various kinds of excitons bound to impurities (neutral and/or ionized donors and acceptors, Haynes’ rule) are dealt with. Description of the luminescence of bound multiexciton complexes follows. The application of the bound exciton concept to quantitative impurity analysis in silicon is described. Finally, the cases of excitons bound to isoelectronic impurities and of self-trapped excitons are analyzed. Whenever meaningful, a particular characteristic emission lineshape that helps to decipher experimental spectrum is pointed out.

Keywords:   Wannier exciton, free exciton–polariton, phonon-assisted exciton emission, selection rules, phonon replicas, bound excitons, Haynes’ rule, bound multiexciton complexes, isoelectronic impurities, self–trapped excitons

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