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Luminescence Spectroscopy of Semiconductors$
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Ivan Pelant and Jan Valenta

Print publication date: 2012

Print ISBN-13: 9780199588336

Published to Oxford Scholarship Online: May 2012

DOI: 10.1093/acprof:oso/9780199588336.001.0001

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5 Channels of radiative recombination in semiconductors

5 Channels of radiative recombination in semiconductors

Chapter:
(p.123) 5 Channels of radiative recombination in semiconductors
Source:
Luminescence Spectroscopy of Semiconductors
Author(s):

Ivan Pelant

Jan Valenta

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199588336.003.0005

Channels of radiative recombination in bulk crystalline semiconductors: a short overview is at first given, then the following processes and their microscopic origin are analyzed: recombination of free electron–hole pairs (both in direct and in indirect bandgap); recombination free electron(hole)–neutral acceptor(donor); recombination of donor–acceptor pairs; two‐photon excited luminescence; luminescence from semiconductors doped with transition metal and rare earth ions. The accent is put on typical lineshape (e.g. Maxwell–Boltzmann) and intensity dependence of each particular process. The role of the density of states, the transition matrix element and suitable occupancy in bands is addressed. Selected examples of experimental emission spectra illustrate the exposition. Discussion of various types of excitons and their radiative recombination is postponed to Chapter 7.

Keywords:   free electron–hole pairs, Maxwell–Boltzmann lineshape, free electron(hole)–neutral acceptor(donor), donor–acceptor pairs, two-photon excitation, transition metal and rare earth ions emission

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