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Luminescence Spectroscopy of Semiconductors$
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Ivan Pelant and Jan Valenta

Print publication date: 2012

Print ISBN-13: 9780199588336

Published to Oxford Scholarship Online: May 2012

DOI: 10.1093/acprof:oso/9780199588336.001.0001

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Kinetic description of luminescence processes

Kinetic description of luminescence processes

Chapter:
(p.82) 3 Kinetic description of luminescence processes
Source:
Luminescence Spectroscopy of Semiconductors
Author(s):

Ivan Pelant

Jan Valenta

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199588336.003.0003

Kinetic description of luminescence processes treats concisely the luminescence phenomena by making use of simple differential equations in time. Important terms like radiative and nonradiative lifetimes are introduced, along with definitions of quantum and power luminescence efficiencies. The important difference between the radiative lifetime and luminescence decay time is stressed. Characteristic luminescence features as the temporal decay shape and intensity dependence of photoluminescence are theoretically derived. Three model situations are examined: monomolecular process (localized luminescence centre), bimolecular process (recombination of free carriers) and their simultaneous occurrence. Single exponential, hyperbolic and stretched exponential luminescence decays are discussed. The model results on intensity dependence are compared with experiment. The general role of the kinetic approach in analyzing experimental data is considered.

Keywords:   radiative lifetime, nonradiative lifetime, decay time, quantum yield, monomolecular process, bimolecular process, stretched exponential, intensity dependence

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