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Luminescence Spectroscopy of Semiconductors$
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Ivan Pelant and Jan Valenta

Print publication date: 2012

Print ISBN-13: 9780199588336

Published to Oxford Scholarship Online: May 2012

DOI: 10.1093/acprof:oso/9780199588336.001.0001

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10 Stimulated emission

10 Stimulated emission

(p.263) 10 Stimulated emission
Luminescence Spectroscopy of Semiconductors

Ivan Pelant

Jan Valenta

Oxford University Press

Stimulated emission is treated as a ‘special case of luminescence’ that requires population inversion of energy levels. After introductory examples of spontaneous emission spectra influenced by ingredient of stimulated emission, basic concept of spontaneous and stimulated emission (Einstein coefficients) in an atomic system is reviewed. The notion of optical gain is introduced. Then an analogous treatment is repeated for semiconductors. Bernard–Duraffourg condition is derived and spectral shape of optical gain is dealt in detail with. The issue of stimulated emission in indirect bandgap semiconductors is mentioned, including note on a germanium laser. A number of exciton radiative processes capable to exhibit stimulated emission are exposed. Finally, common experimental techniques to measure optical gain (variable stripe length, scanning excitation spot, and pump&probe) are analyzed and compared. Modal gain and material gain are distinguished. Throughout the chapter, illustrative experimental and theoretical examples adopted from gain spectroscopy in various semiconductors clarify the text.

Keywords:   Einstein coefficients, optical gain, material gain, modal gain, Bernard–Duraffourg condition, Ge laser, variable stripe length, shifting excitation spot, pump&probe

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