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Semiconductor NanostructuresQuantum states and electronic transport$
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Thomas Ihn

Print publication date: 2009

Print ISBN-13: 9780199534425

Published to Oxford Scholarship Online: February 2010

DOI: 10.1093/acprof:oso/9780199534425.001.0001

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Fabrication of semiconductor nanostructures

Fabrication of semiconductor nanostructures

Chapter:
(p.83) 6 Fabrication of semiconductor nanostructures
Source:
Semiconductor Nanostructures
Author(s):

Thomas Ihn

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199534425.003.0006

This chapter discusses some of the most common fabrication methods used for the realization of semiconductor nanostructures. Top-down and bottom-up approaches are distinguished. Among the latter, self-assembled growth, growth on pre-patterned substrates, cleaved edge overgrowth, the catalytic growth of nanowires, and carbon nanotube fabrication are looked at more closely. Beyond these techniques, lateral patterning with photolithography, electron-beam lithography, and local anodic oxidation are discussed. The chapter ends with a brief description of the mechanical exfoliation of single-layer graphene sheets.

Keywords:   self-assembled growth, pre-patterned substrates, cleaved edge overgrowth, nanowire growth, carbon nanotube fabrication, photolithography, electron beam lithography, local anodic oxidation, mechanical exfoliation

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