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Concepts in Spin Electronics$
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Sadamichi Maekawa

Print publication date: 2006

Print ISBN-13: 9780198568216

Published to Oxford Scholarship Online: September 2007

DOI: 10.1093/acprof:oso/9780198568216.001.0001

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Optical phenomena in magnetic semiconductors

Optical phenomena in magnetic semiconductors

Chapter:
(p.1) 1 Optical phenomena in magnetic semiconductors
Source:
Concepts in Spin Electronics
Author(s):

H. Munekata

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198568216.003.0001

This chapter focuses on the manipulation of ferromagnetism by the band-to-band optical excitation in III-V-based magnetic alloy semiconductors (III-V-MAS). This class of semiconductor materials contain a large amount of magnetic ions (1020-1021 cm-3) in the host crystals, making it possible to exchange charges and spins between local magnetic moments and band electrons, and yield carrier-mediated ferromagnetic order. The chapter begins with the description of III-V-MAS aiming at grabbing the essence of hole-mediated ferromagnetism. This is followed by a description of the optical property of the III-V-MAS in which optical selection rules, magneto-optical effects, and practical experimental concerns are also mentioned. The optical manipulation of ordered spins by the energy and angular momentum of light is then discussed. Finally, the development of spin-dependent optical devices, e.g., polarized-light detectors and emitters, on the basis of spin-dependent optical transitions and spin-dependent carrier transport is considered with some applications in mind.

Keywords:   III-V compound semiconductor, magneto-optical effects, optical orientation, optical excitation, magnetization rotation, magnetization reversal, spin exchange interaction, spin voltaic effect, spin-photodiode, spin-light-emitting diode

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