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Quantum Dot Lasers$
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Victor M. Ustinov, Alexey E. Zhukov, Anton Yu. Egorov, and Nikolai A. Maleev

Print publication date: 2003

Print ISBN-13: 9780198526797

Published to Oxford Scholarship Online: January 2010

DOI: 10.1093/acprof:oso/9780198526797.001.0001

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Quantum-dot edge-emitting lasers

Quantum-dot edge-emitting lasers

Chapter:
(p.130) 5 Quantum-dot edge-emitting lasers
Source:
Quantum Dot Lasers
Author(s):

Victor M. Ustinov

Alexey E. Zhukov

Anton Yu. Egorov

Nikolai A. Maleev

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198526797.003.0005

This chapter provides an historical overview of the development of quantum dot edge-emitting lasers from their first demonstration to the present status. Issues of gain saturation and temperature instability in initial lasers based on a single plane of self-organized quantum dots are discussed. Several approaches to improve the performance of InGaAs quantum dot lasers are discussed in detail: increase of the QD density of states by stacking of quantum dots; use of matrix material having a higher bandgap energy; seeding of quantum dots to increase their density; and sub-monolayer formation of quantum dots to increase their density and improve uniformity. At the end of the chapter, experimental results for representative quantum-dot lasers grown on non-GaAs substrates are presented.

Keywords:   edge-emitting lasers, quantum dot lasers, threshold current, quantum dot stacking, InGaAs

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