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Quantum Dot Lasers$
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Victor M. Ustinov, Alexey E. Zhukov, Anton Yu. Egorov, and Nikolai A. Maleev

Print publication date: 2003

Print ISBN-13: 9780198526797

Published to Oxford Scholarship Online: January 2010

DOI: 10.1093/acprof:oso/9780198526797.001.0001

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PRINTED FROM OXFORD SCHOLARSHIP ONLINE (www.oxfordscholarship.com). (c) Copyright Oxford University Press, 2019. All Rights Reserved. An individual user may print out a PDF of a single chapter of a monograph in OSO for personal use. date: 17 November 2019

Optical gain and threshold characteristics of a self-organized quantum dot diode laser

Optical gain and threshold characteristics of a self-organized quantum dot diode laser

Chapter:
(p.105) 4 Optical gain and threshold characteristics of a self-organized quantum dot diode laser
Source:
Quantum Dot Lasers
Author(s):

Victor M. Ustinov

Alexey E. Zhukov

Anton Yu. Egorov

Nikolai A. Maleev

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198526797.003.0004

This chapter discusses the peculiar properties of lasers based on self-organized quantum dot arrays. A correlation between density of states, saturated gain and transparency current is discussed taking into account inhomogeneous broadening and higher-energy states. Ground-to-excited state lasing transition, which is observed in QD lasers, is explained. Empirical and analytical expressions are considered, which are capable of describing gain-current relation in self-organized QD lasers in the presence of wetting layer, matrix, and excited quantum dot states. A method to prevent gain saturation by multiple stacking of quantum dots is described in connection with the effect of the QD surface density on the threshold current. The effect of temperature on the gain and threshold characteristics is also discussed in realistic QD lasers.

Keywords:   inhomogeneous broadening, excited states, optical gain saturation, threshold current

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