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Quantum Dot Lasers$
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Victor M. Ustinov, Alexey E. Zhukov, Anton Yu. Egorov, and Nikolai A. Maleev

Print publication date: 2003

Print ISBN-13: 9780198526797

Published to Oxford Scholarship Online: January 2010

DOI: 10.1093/acprof:oso/9780198526797.001.0001

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Fabrication techniques and methods for semiconductor quantum dots

Fabrication techniques and methods for semiconductor quantum dots

Chapter:
(p.45) 2 Fabrication techniques and methods for semiconductor quantum dots
Source:
Quantum Dot Lasers
Author(s):

Victor M. Ustinov

Alexey E. Zhukov

Anton Yu. Egorov

Nikolai A. Maleev

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198526797.003.0002

This chapter first considers the basic principles of molecular beam epitaxy (MBE) of III-V materials. It describes a typical MBE system and its components with special attention to the reflection high-energy electron diffraction system for in-situ monitoring of a growth surface. Metal organic chemical vapour deposition (MOCVD), chemical reactions in MOCVD process and typical reactor scheme are then described. The chapter also describes different methods of in situ formation of one- or zero-dimensional quantum size objects, including formation of quantum wires on a V-grooved substrate, quantum wires and dots on high-index surfaces, and selective epitaxial growth of low-dimensional structures. Special attention is paid to a method of quantum dot formation in Stranski–Krastanow growth mode.

Keywords:   epitaxy, quantum wires, quantum dots, Stranski–Krastanow growth

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