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Quantum Dot Lasers$
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Victor M. Ustinov, Alexey E. Zhukov, Anton Yu. Egorov, and Nikolai A. Maleev

Print publication date: 2003

Print ISBN-13: 9780198526797

Published to Oxford Scholarship Online: January 2010

DOI: 10.1093/acprof:oso/9780198526797.001.0001

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PRINTED FROM OXFORD SCHOLARSHIP ONLINE (www.oxfordscholarship.com). (c) Copyright Oxford University Press, 2020. All Rights Reserved. An individual user may print out a PDF of a single chapter of a monograph in OSO for personal use. date: 19 February 2020

Introduction

Introduction

Chapter:
(p.3) 1 Introduction
Source:
Quantum Dot Lasers
Author(s):

Victor M. Ustinov

Alexey E. Zhukov

Anton Yu. Egorov

Nikolai A. Maleev

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198526797.003.0001

This introductory chapter considers the basic principles of operation of diode lasers. The condition of inverse population in semiconductors is derived from Fermi statistics. Light confinement in a laser cavity, including transverse and longitudinal optical modes, is discussed. Main device characteristics of a diode laser, such as light-current and current-voltage curves as well as power conversion efficiency are described in their relation with the internal parameters of the active region. Optical gain and its relationship with laser threshold are considered. Electronic structure of solid state and microscopic theory of optical gain are briefly summarized in the chapter. Size quantization in semiconductors caused by energy barriers at heterointerfaces is considered. Density of states for various types of size dimensionality is presented. Effect of the density of states in the laser active region on the gain characteristics is discussed with attention to the ideal quantum dot array.

Keywords:   lasing, density of states, optical gain, size quantization, quantum dots

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