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Plasmonic Effects in Metal-Semiconductor Nanostructures$
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Alexey A. Toropov and Tatiana V. Shubina

Print publication date: 2015

Print ISBN-13: 9780199699315

Published to Oxford Scholarship Online: May 2015

DOI: 10.1093/acprof:oso/9780199699315.001.0001

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Optics in Semiconductors

Optics in Semiconductors

(p.83) 4 Optics in Semiconductors
Plasmonic Effects in Metal-Semiconductor Nanostructures

Alexey A. Toropov

Tatiana V. Shubina

Oxford University Press

This chapter describes basic optical processes in semiconductor crystals, including interband optical absorption, gain, and emission. The consideration is performed for the two types of crystal structures, zinc-blende and wurtzite, in the framework of a semi-classical approach when the electromagnetic field is treated classically while the electrons are described by the quantum mechanical Hamiltonian and wave functions. Einstein coefficients are introduced in order to define the connection between absorption, stimulated emission, and spontaneous emission. Optical selection rules are obtained in the framework of the k⋅p theory by calculating the interband momentum matrix elements. The concepts of Wannier–Mott excitons and exciton polaritons are discussed in the framework of the effective mass approximation for the case of the direct band-gap semiconductors. The chapter establishes the symmetry classification of excitonic states in the semiconductor crystals in terms of the theory of irreducible group representations.

Keywords:   interband absorption, spontaneous emission, stimulated emission, Einstein coefficients, momentum matrix elements effective-mass approximation, Wannier–Mott excitons, exciton polaritons

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