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Molecular Beam EpitaxyA Short History$
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John Orton and Tom Foxon

Print publication date: 2015

Print ISBN-13: 9780199695829

Published to Oxford Scholarship Online: August 2015

DOI: 10.1093/acprof:oso/9780199695829.001.0001

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Nitrides, Phosphides, Antimonides and Bismides

Nitrides, Phosphides, Antimonides and Bismides

Chapter:
Chapter 7 Nitrides, Phosphides, Antimonides and Bismides
Source:
Molecular Beam Epitaxy
Author(s):

John Orton

Tom Foxon

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199695829.003.0007

In the 1980s and 1990s, many semiconductor materials were grown by MBE. Nitrides were of interest for visible LEDs, lasers and for high-power transistors. Problems arose from the lack of lattice-matched substrates and from the large internal electric fields resulting from their Wurtzite crystal structure. MBE made possible the growth of zinc blende films with improved properties. Highly mismatched alloys such as GaPN and GaAsN, grown by MBE, are unusual in that adding N reduces the band gap. Adding Bi to GaAs does the same. Such materials show promise for making fibre-optic lasers. AlGaInP, lattice-matched to GaAs substrates, is important for red, yellow and green LEDs and lasers. GaP, grown on Si substrates, is of interest for combining optical and electronic functions. The antimonides show promise when combined with InAs in high-electron mobility devices.

Keywords:   nitrides, phosphides, antimonides, bismides, highly mismatched alloys

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