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Quantum Confined Laser DevicesOptical gain and recombination in semiconductors$
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Peter Blood

Print publication date: 2015

Print ISBN-13: 9780199644513

Published to Oxford Scholarship Online: November 2015

DOI: 10.1093/acprof:oso/9780199644513.001.0001

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Gain and emission in quantum dots

Gain and emission in quantum dots

Chapter:
(p.135) 9 Gain and emission in quantum dots
Source:
Quantum Confined Laser Devices
Author(s):

Peter Blood

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199644513.003.0009

The absorption, gain, and spontaneous emission spectra due to optical transitions in a layer of quantum dots in the slab waveguide of a laser are derived in terms of the dipole matrix element and optical cross section of the dots. This leads to the relation between peak modal gain and intrinsic spontaneous recombination current that is at the heart of device design. Injection lasers use self-assembled dots and so an inhomogeneous distribution of dot sizes, and therefore confined state energies, is a fact of life: this inhomogeneous broadening influences the shape of the spectra. The electron occupation of the states in each dot is determined by capture and emission of carriers injected into the wetting layer. The use of thermal distributions specified by Fermi functions and random population of dots are considered.

Keywords:   optical transition, inhomogeneous distribution, absorption, spontaneous emission, modal gain, thermal distribution, random population, charge neutrality

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