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Quantum Confined Laser DevicesOptical gain and recombination in semiconductors$
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Peter Blood

Print publication date: 2015

Print ISBN-13: 9780199644513

Published to Oxford Scholarship Online: November 2015

DOI: 10.1093/acprof:oso/9780199644513.001.0001

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The laser diode structure

The laser diode structure

Chapter:
(p.22) 3 The laser diode structure
Source:
Quantum Confined Laser Devices
Author(s):

Peter Blood

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199644513.003.0003

A laser diode structure calls for materials of different band gap to provide optical and electrical confinement and these should have a similar lattice parameter to the substrate on which they are grown. This is achieved using direct-gap compound semiconductors and their alloys in which the band gap and lattice parameter change with the composition. Typical III–V alloy systems used for laser structures are described. In some cases modest amounts of strain can give improvements in laser performance. Semiconductor alloy materials of different band gap are combined to form heterostructures, which are characterised by the band offsets at the interface between them. These materials may be the same carrier type throughout or incorporate a p–n junction to inject carriers to achieve population inversion. Construction of the energy band diagrams of these structures and of quantum wells is described.

Keywords:   compound semiconductors, semiconductor alloys, heterostructure, band offset, energy band diagram

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