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Quantum Confined Laser DevicesOptical gain and recombination in semiconductors$
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Peter Blood

Print publication date: 2015

Print ISBN-13: 9780199644513

Published to Oxford Scholarship Online: November 2015

DOI: 10.1093/acprof:oso/9780199644513.001.0001

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Temperature dependence of threshold current

Temperature dependence of threshold current

Chapter:
(p.284) 16 Temperature dependence of threshold current
Source:
Quantum Confined Laser Devices
Author(s):

Peter Blood

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199644513.003.0016

The variation of the threshold current density with temperature is an important characteristic of a diode laser and considerable effort is devoted to designing devices that have a temperature-insensitive threshold current to avoid the expense, and power consumption, of device cooling. This chapter sets out the physics that determines this dependence, together with some illustrative examples. Relevant processes include Auger recombination and carrier leakage out of the confined region, as well as barrier recombination and current flow through the cladding layers by drift and diffusion. In quantum dot lasers the wetting layer has significant influence on the temperature dependence. In a VCSEL the temperature dependence of threshold is determined by the need to meet the threshold condition at the cavity resonance rather than the gain peak. The conditions surrounding the use of the characteristic temperature T0 as a measure of temperature sensitivity are described.

Keywords:   carrier leakage, barrier recombination, drift, diffusion, wetting layer, characteristic temperature, T0, Arrhenius plot, VCSEL

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