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Quantum Confined Laser DevicesOptical gain and recombination in semiconductors$
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Peter Blood

Print publication date: 2015

Print ISBN-13: 9780199644513

Published to Oxford Scholarship Online: November 2015

DOI: 10.1093/acprof:oso/9780199644513.001.0001

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Gain and recombination current in quantum wells

Gain and recombination current in quantum wells

Chapter:
(p.195) 12 Gain and recombination current in quantum wells
Source:
Quantum Confined Laser Devices
Author(s):

Peter Blood

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199644513.003.0012

Examples of typical quantum well gain and spontaneous emission spectra are used to obtain the gain–current relation between peak gain and radiative recombination current, and its temperature dependence, which provide the basis for laser design. The influence of elastic strain and its benefits for laser operation are considered, as are the effects of non-parabolic bands. The effects of band gap narrowing, Coulomb enhancement of gain, and wavefunction dephasing are described, all due to interactions between the large number of carriers present in a working laser device.

Keywords:   gain–current relation, elastic strain, temperature dependence, non-parabolic band, band gap narrowing, dephasing, Coulomb enhancement, many-body effect

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