Jump to ContentJump to Main Navigation
Quantum Confined Laser DevicesOptical gain and recombination in semiconductors$
Users without a subscription are not able to see the full content.

Peter Blood

Print publication date: 2015

Print ISBN-13: 9780199644513

Published to Oxford Scholarship Online: November 2015

DOI: 10.1093/acprof:oso/9780199644513.001.0001

Show Summary Details
Page of

PRINTED FROM OXFORD SCHOLARSHIP ONLINE (www.oxfordscholarship.com). (c) Copyright Oxford University Press, 2018. All Rights Reserved. Under the terms of the licence agreement, an individual user may print out a PDF of a single chapter of a monograph in OSO for personal use (for details see http://www.oxfordscholarship.com/page/privacy-policy).date: 22 June 2018

Rate equations for dot state occupation

Rate equations for dot state occupation

Chapter:
(p.159) 10 Rate equations for dot state occupation
Source:
Quantum Confined Laser Devices
Author(s):

Peter Blood

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199644513.003.0010

Rate equations for electrons in dot states can be used to avoid the assumption that electrons are distributed thermally according to Fermi functions. The equations treat the processes of capture and emission of electrons from and to the wetting layer, and of recombination between conduction and valence dot states. Electron capture and emission are controlled by generation and absorption of phonons, and the rate equations are solved in the steady states for a dot system in equilibrium with a Bose–Einstein phonon energy distribution. At high temperature, when the emission rate to the wetting layer exceeds the recombination rate, a thermal, Fermi electron distribution is established, whereas at low temperature, where the emission rate is very slow compared with the recombination rate, the occupation probability of dot states is independent of their energy. This is the random population regime.

Keywords:   rate equation, electron capture, electron emission, phonon, thermal distribution, random population

Oxford Scholarship Online requires a subscription or purchase to access the full text of books within the service. Public users can however freely search the site and view the abstracts and keywords for each book and chapter.

Please, subscribe or login to access full text content.

If you think you should have access to this title, please contact your librarian.

To troubleshoot, please check our FAQs , and if you can't find the answer there, please contact us .