Luminescence of disordered semiconductors
Luminescence of disordered (amorphous) semiconductors is due to a different microscopic mechanism compared to those being active in the luminescence of crystalline counterparts with long-range order. Electron and hole tail states, originating from dangling bonds, play the decisive role. Features typical for the amorphous semiconductor luminescence are discussed, namely: peculiar temperature dependence driven by the demarcation energy and distribution of luminescence decay times. Two theoretical models describing spectral shape of the emission band are examined: the phonon broadening model and the disorder broadening model. Theoretical band shapes are compared with experimental spectra found in amorphous elemental semiconductors. The concept of geminate and non-geminate electron–hole pairs is briefly debated. Multiple nonradiative recombination paths are mentioned as well as luminescence of impurities and defects.
Keywords: dangling bonds, tail states, temperature dependence, demarcation energy, distribution of decay times, phonon broadening, disorder broadening, geminate recombination, non-geminate recombination
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