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Luminescence Spectroscopy of Semiconductors$
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Ivan Pelant and Jan Valenta

Print publication date: 2012

Print ISBN-13: 9780199588336

Published to Oxford Scholarship Online: May 2012

DOI: 10.1093/acprof:oso/9780199588336.001.0001

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Luminescence of disordered semiconductors

Luminescence of disordered semiconductors

Chapter:
(p.242) 9 Luminescence of disordered semiconductors
Source:
Luminescence Spectroscopy of Semiconductors
Author(s):

Ivan Pelant

Jan Valenta

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199588336.003.0009

Luminescence of disordered (amorphous) semiconductors is due to a different microscopic mechanism compared to those being active in the luminescence of crystalline counterparts with long-range order. Electron and hole tail states, originating from dangling bonds, play the decisive role. Features typical for the amorphous semiconductor luminescence are discussed, namely: peculiar temperature dependence driven by the demarcation energy and distribution of luminescence decay times. Two theoretical models describing spectral shape of the emission band are examined: the phonon broadening model and the disorder broadening model. Theoretical band shapes are compared with experimental spectra found in amorphous elemental semiconductors. The concept of geminate and non-geminate electron–hole pairs is briefly debated. Multiple nonradiative recombination paths are mentioned as well as luminescence of impurities and defects.

Keywords:   dangling bonds, tail states, temperature dependence, demarcation energy, distribution of decay times, phonon broadening, disorder broadening, geminate recombination, non-geminate recombination

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