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Multifunctional Oxide Heterostructures$
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Evgeny Y. Tsymbal, Elbio R. A. Dagotto, Chang-Beom Eom, and Ramamoorthy Ramesh

Print publication date: 2012

Print ISBN-13: 9780199584123

Published to Oxford Scholarship Online: January 2013

DOI: 10.1093/acprof:oso/9780199584123.001.0001

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LaAlO3/SrTiO3-based device concepts

LaAlO3/SrTiO3-based device concepts

Chapter:
(p.364) 13 LaAlO3/SrTiO3-based device concepts
Source:
Multifunctional Oxide Heterostructures
Author(s):

Daniela F. Bogorin

Patrick Irvin

Cheng Cen

Jeremy Levy

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780199584123.003.0013

This chapter discusses a variety of device concepts that are based on the conductive interface between LaAlO3 and SrTiO3. The interface between these two insulating oxides spontaneously forms a high mobility, two dimensional electron gas when the LaAlO3 thickness exceeds a critical value. At the critical thickness, the insulator-metal transition can be reversibly controlled using externally applied fields, and furthermore can be defined on the extreme nanoscale using a conducting AFM probe. After an initial discussion of macroscopic field effects at this interface, the chapter describes the use of conducting AFM lithography to fabricate nanoscale devices. Nanoscale wires, diodes, transistors, and photodetectors can be created, modified, and erased. Possible future integration with silicon-based electronics is discussed, along with possible applications in the fields of spintronics, quantum information processing, and quantum simulation.

Keywords:   LaAlO3, SrTiO3, nanotechnology, atomic force microscopy, two dimensional electron gas, quantum information

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