Measurements of the Casimir Force with Semiconductors
This chapter considers three experiments on measuring the Casimir force between an Au-coated sphere and an Si plate. The first experiment revealed that the measured Casimir force for a plate made of p-type Si was markedly different from the calculation results for dielectric Si. In the second experiment, the difference in the Casimir forces for an Au coated sphere and two plates made of n-type Si with different charge carriers densities was measured. Through this, the dependence of the Casimir force on the charge carrier density was demonstrated. Modification of the Casimir force through an optically induced change in the charge carrier density was first demonstrated in the third experiment. This experiment was also used as a test for various theoretical approaches to the description of charge carriers in dielectrics and semiconductors. All of these results are presented in the chapter.
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