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Hybrid Phonons in Nanostructures$
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Brian K. Ridley

Print publication date: 2017

Print ISBN-13: 9780198788362

Published to Oxford Scholarship Online: April 2017

DOI: 10.1093/acprof:oso/9780198788362.001.0001

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Single Heterostructure

Single Heterostructure

Chapter:
(p.69) 7 Single Heterostructure
Source:
Hybrid Phonons in Nanostructures
Author(s):

B. K. Ridley

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198788362.003.0009

The single heterostructure is one of the most technologically versatile devices, being the structure of field-effect transistors and Schottky-effect devices, to say nothing of its capability of exhibiting the quantum Hall effect at low temperatures. Here, the focus is on a heterostructure composed of III–V compounds such as AlAs/GaAs at room temperature and above, where optical waves are readily excited. This chapter covers: hybrid model for optical modes: LO, pTO, IF; ionic displacement and associated electric fields; fields in the barrier layer – remote phonons; mechanical boundary condition u = 0; energy normalization; reduced boundary conditions; acoustic hybrids: sTA, pTA, pLO; and interface acoustic modes.

Keywords:   single heterostructure, optical modes, acoustic modes, enery normalization, boundary conditions

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