The single heterostructure is one of the most technologically versatile devices, being the structure of field-effect transistors and Schottky-effect devices, to say nothing of its capability of exhibiting the quantum Hall effect at low temperatures. Here, the focus is on a heterostructure composed of III–V compounds such as AlAs/GaAs at room temperature and above, where optical waves are readily excited. This chapter covers: hybrid model for optical modes: LO, pTO, IF; ionic displacement and associated electric fields; fields in the barrier layer – remote phonons; mechanical boundary condition u = 0; energy normalization; reduced boundary conditions; acoustic hybrids: sTA, pTA, pLO; and interface acoustic modes.
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