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Intense Terahertz Excitation of Semiconductors$
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Sergey Ganichev and Willi Prettl

Print publication date: 2005

Print ISBN-13: 9780198528302

Published to Oxford Scholarship Online: September 2007

DOI: 10.1093/acprof:oso/9780198528302.001.0001

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ELECTRON GAS HEATING

ELECTRON GAS HEATING

Chapter:
(p.237) 5 ELECTRON GAS HEATING
Source:
Intense Terahertz Excitation of Semiconductors
Author(s):

S. D. Ganichev

W. Prettl

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198528302.003.0006

This chapter is devoted to the heating and cooling of free carriers by terahertz radiation, focusing on nonlinear phenomena. Light impact ionization shows that at intense terahertz irradiation, electron-hole pairs can be generated in semiconductors though the photon energies are several tens of times less than the energy gap. Furthermore, μ-photoconductivity and heating of phonons due to absorption of THz radiation is considered.

Keywords:   electron gas heating, electron gas cooling, μ-photoconductivity, nonlinear photoconductivity, light impact ionization, heating of phonons

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