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Intense Terahertz Excitation of Semiconductors$
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Sergey Ganichev and Willi Prettl

Print publication date: 2005

Print ISBN-13: 9780198528302

Published to Oxford Scholarship Online: September 2007

DOI: 10.1093/acprof:oso/9780198528302.001.0001

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MULTIPHOTON EXCITATION

MULTIPHOTON EXCITATION

Chapter:
(p.161) 3 MULTIPHOTON EXCITATION
Source:
Intense Terahertz Excitation of Semiconductors
Author(s):

S. D. Ganichev

W. Prettl

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198528302.003.0004

This chapter is concerned with multiphoton transitions in the perturbative limit and beyond, resulting in fully developed nonlinearity where quantum interference effects control the absorption of photons. Of particular interest is the range beyond the perturbation limit which represents the transition from multiphoton absorption to tunneling. This transition is experimentally accessible only in the THz-range. The required intensities are very high but at THz frequencies still below the damage limit.

Keywords:   multiphoton absorption, tunneling, nonperturbative limit, nonlinear transmission, photon drag effect, superlattices

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