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Intense Terahertz Excitation of Semiconductors$
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Sergey Ganichev and Willi Prettl

Print publication date: 2005

Print ISBN-13: 9780198528302

Published to Oxford Scholarship Online: September 2007

DOI: 10.1093/acprof:oso/9780198528302.001.0001

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TUNNELING IN TERAHERTZ FIELDS

TUNNELING IN TERAHERTZ FIELDS

Chapter:
(p.93) 2 TUNNELING IN TERAHERTZ FIELDS
Source:
Intense Terahertz Excitation of Semiconductors
Author(s):

S. D. Ganichev

W. Prettl

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198528302.003.0003

This chapter deals with tunneling phenomena in high-frequency alternating fields comprising solely terahertz field-induced tunneling as well as terahertz radiation-mediated tunneling in static electric fields. The enhancement of tunneling probability with rising radiation frequency is treated in detail from an experimental and theoretical point of view. Tunneling in THz-field provides a method for characterizing semiconductors. In particular, the determination of tunneling times is sketched. The effect of THz-radiation on tunneling in dc-fields is also described, including photon assisted tunneling and ponderomotive action of radiation on electrons.

Keywords:   tunneling time, phonon and photon assisted tunneling, deep impurities, Poole-Frenkel effect, plasma reflection, ponderomotive forces, superlattices

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