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Intense Terahertz Excitation of Semiconductors$
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Sergey Ganichev and Willi Prettl

Print publication date: 2005

Print ISBN-13: 9780198528302

Published to Oxford Scholarship Online: September 2007

DOI: 10.1093/acprof:oso/9780198528302.001.0001

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Intense Terahertz Excitation of Semiconductors

S. D. Ganichev

W. Prettl

Oxford University Press

This chapter discusses the terahertz-related experimental technique, including high-power laser sources, detectors of intense radiation, and optical components such as windows and filters, as well as experimental methods suitable for terahertz investigations. The treatment of sources of high-power terahertz radiation include the CO2 laser, optically pumped terahertz molecular lasers, terahertz molecular lasers pumped by tunable high-pressure TE-CO2 laser, free-electron lasers, and generation of short coherent terahertz pulses is covered. Optical components and methods in the THz range comprising windows, filters, polarizers, attenuators, and methods of spectral analysis are also mentioned. In particular, the spectral characteristics of a large number of materials are presented. Various detection concepts are described in detail.

Keywords:   CO2 lasers, THz-lasers, molecular lasers, free-electron laser, infrared/THz windows, polarizers, attenuators, detection, THz/infrared spectroscopy

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