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Semiconductor Detector Systems$
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Helmuth Spieler

Print publication date: 2005

Print ISBN-13: 9780198527848

Published to Oxford Scholarship Online: September 2007

DOI: 10.1093/acprof:oso/9780198527848.001.0001

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SIGNAL FORMATION AND ACQUISITION

SIGNAL FORMATION AND ACQUISITION

Chapter:
(p.43) 2 SIGNAL FORMATION AND ACQUISITION
Source:
Semiconductor Detector Systems
Author(s):

Helmuth Spieler

Publisher:
Oxford University Press
DOI:10.1093/acprof:oso/9780198527848.003.0002

This chapter first discusses which parameters determine sensor sensitivity, and then explains the basic semiconductor physics relevant to radiation detectors. Statistical limits to energy resolution are discussed with a simple derivation of the Fano factor. Semiconductor doping and pn-junctions are explained and applied to the formation of extended detector volumes. Quantitative expressions describing charge transport and collection times are derived. The mechanism of induced charge is explained and applied to multi-electrode structures, such as strip and pixel detectors (Ramo's theorem). Charge collection in the presence of trapping and alternate sensor materials is discussed. Avalanche gain is described and applied to photodiodes. The second half of the chapter explains the basics of electronic signal acquisition with voltage, current, or charge-sensitive amplifiers. The relationship between pulse rise time and frequency response is explained together with the basic amplifier parameters that limit bandwidth. In closing, the importance of amplifier input impedance is shown.

Keywords:   energy resolution, Fano factor, doping, pn-junction, charge collection, induced charge, Ramo's theorem, trapping, avalanche gain, photodiodes

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